Direct observation order–disorder transition in flux line lattice BSCCO(2212) at low temperatures
نویسندگان
چکیده
منابع مشابه
Observation of non-Gaussian conductance fluctuations at low temperatures in Si:P(b) at the metal-insulator transition.
We report investigations of conductance fluctuations (with 1/f(alpha) power spectra) in doped silicon at low temperatures (T<20 K) as it is tuned through the metal-insulator transition (MIT) by changing the carrier concentration n. The scaled magnitude of noise, gamma(H), increases with decreasing T following an approximate power law gamma(H) approximately T-beta. At low T, gamma(H) diverges as...
متن کاملFlux-line lattice distortion in PrOs4Sb12.
We report that the flux-line lattice in the cubic superconductor Pr(Os4Sb12 is strongly distorted from an ideal hexagonal lattice at very low temperatures in a small applied field. We attribute this to the presence of gap nodes in the superconducting state on at least some Fermi-surface sheets.
متن کاملLarge-N treatment of the Abrikosov transition at low temperatures
We investigate the influence of order-parameter fluctuations on the transition between normal and mixed superconducting states at low temperatures. We show that in the case of clean quasi-two-dimensional superconductors the transition can be described by the functional of the Ginzburg-Landau type. We consider the large-N generalization of this functional and using the lowest Landau-level approx...
متن کاملDirect Measurement of Desorption Kinetics of 4He at Low Temperatures
general results a r e similar : The characteristic lengths of helicity a r e larger than those of the energy, and the helicity again oscillates between positive and negative values at all smaller scales. The data at 1 AU were taken in a s t ream interaction region13 and included both slow stream and fast stream intervals. Thus these results suggest that there is nothing atypical in the data sho...
متن کاملDirect electrodeposition of crystalline silicon at low temperatures.
An electrochemical liquid-liquid-solid (ec-LLS) process that yields crystalline silicon at low temperature (80 °C) without any physical or chemical templating agent has been demonstrated. Electroreduction of dissolved SiCl(4) in propylene carbonate using a liquid gallium [Ga(l)] pool as the working electrode consistently yielded crystalline Si. X-ray diffraction and electron diffraction data se...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2009
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/150/5/052280